1. | ![]() |
Energy band theory in solids | electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors | ![]() |
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Energy band theory in solids | electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors | ![]() |
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Energy band theory in solids | electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors | ![]() |
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Energy band theory in solids | electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors | ![]() |
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2. | ![]() |
Electrical properties of semiocnductors | deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation | ![]() |
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Electrical properties of semiocnductors | deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation | ![]() |
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Electrical properties of semiocnductors | deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation | ![]() |
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Electrical properties of semiocnductors | deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation | ![]() |
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3. | ![]() |
Current-voltage characteristics of pn junctions | built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer | ![]() |
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Current-voltage characteristics of pn junctions | built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer | ![]() |
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Current-voltage characteristics of pn junctions | built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer | ![]() |
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4. | ![]() |
Capacitance- voltage and other characteristics of pn junctions | capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes | ![]() |
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Capacitance- voltage and other characteristics of pn junctions | capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes | ![]() |
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Capacitance- voltage and other characteristics of pn junctions | capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes | ![]() |
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Capacitance- voltage and other characteristics of pn junctions | capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes | ![]() |
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5. | ![]() |
Schottky diodes and fabrication of semiconductor devices | metal-semiconductor junction, thermionic emission, lithography, impurity doping | ![]() |
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Schottky diodes and fabrication of semiconductor devices | metal-semiconductor junction, thermionic emission, lithography, impurity doping | ![]() |
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Schottky diodes and fabrication of semiconductor devices | metal-semiconductor junction, thermionic emission, lithography, impurity doping | ![]() |
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Schottky diodes and fabrication of semiconductor devices | metal-semiconductor junction, thermionic emission, lithography, impurity doping | ![]() |
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6. | ![]() |
Operation principle of bipolar transistors Ⅰ | emitter, base, collector, current transmission efficiency | ![]() |
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Operation principle of bipolar transistors Ⅰ | emitter, base, collector, current transmission efficiency | ![]() |
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Operation principle of bipolar transistors Ⅰ | emitter, base, collector, current transmission efficiency | ![]() |
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Operation principle of bipolar transistors Ⅰ | emitter, base, collector, current transmission efficiency | ![]() |
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7. | ![]() |
Operation principle of bipolar transistors Ⅱ | current amplification factor, switching characteristics and bipolar integrated circuits | ![]() |
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Operation principle of bipolar transistors Ⅱ | current amplification factor, switching characteristics and bipolar integrated circuits | ![]() |
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Operation principle of bipolar transistors Ⅱ | current amplification factor, switching characteristics and bipolar integrated circuits | ![]() |
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Operation principle of bipolar transistors Ⅱ | current amplification factor, switching characteristics and bipolar integrated circuits | ![]() |
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8. | ![]() |
Operation principle of bipolar transistors Ⅲ | bipolar power devices, breakover characteristics, thyristor | ![]() |
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Operation principle of bipolar transistors Ⅲ | bipolar power devices, breakover characteristics, thyristor | ![]() |
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9. | ![]() |
Characteristics of MOS diodes Ⅰ | ideal MOS diodes, accumulation, depletion | ![]() |
10. | ![]() |
Characteritics of MOS diodes Ⅱ | inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion | ![]() |
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Characteritics of MOS diodes Ⅱ | inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion | ![]() |
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Characteritics of MOS diodes Ⅱ | inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion | ![]() |
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Characteritics of MOS diodes Ⅱ | inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion | ![]() |
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11. | ![]() |
Characreristics of MOSFETs | pinch-off, ID - VG and ID - VD characteristics, subthreshold characterisics | ![]() |
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Characreristics of MOSFETs | pinch-off, ID - VG and ID - VD characteristics, subthreshold characterisics | ![]() |
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Characreristics of MOSFETs | pinch-off, ID - VG and ID - VD characteristics, subthreshold characterisics | ![]() |
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12. | ![]() |
CMOS basic circuits | resistor-load inverter circuits, CMOS inverter circuits, NAND and NOR circuits | ![]() |
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CMOS basic circuits | resistor-load inverter circuits, CMOS inverter circuits, NAND and NOR circuits | ![]() |