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Basic Physics | 4.3 Reverse-biased PN junction 4.4 Capacitance-Voltage Characteristics 4.6 Carrier Injection under forward Bias-Quasi-Equilibrium boundary Cond. | ![]() |
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PN Junctions | 4.7 Current Continuity Equation 4.8 Excess Carriers in Forward-Bias 4.9 PN Diode IV Characteristics 4.9.1 Contributions from Depletion Regions | ![]() |
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Metal-Semiconductor Junctions | 4.0 Schottky Junction | ![]() |
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Application to optoelectronic devices | 4.12.1 Solar cell basics 4.12.2 Light penetration Depth | ![]() |
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Application to optoelectronic devices | 4.12.1 Solar cell basics 4.12.2 Direct-/Indirect-Gap semiconductor 4.12.3 Short-Circuit current, Isc 4.12.3 Open-Circuit Voltage, Voc 4.12.4 Output power 4.13 Light-Emitting Diodes(LEDs) | ![]() |
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MOS Capacitor | 5.1 Flat-Band condition/voltage 5.2 Surface Accumulation 5.3 Surface Depletion 5.4 Threshold condition/voltage | ![]() |
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MOS Capacitor | 5.1 Flat-Band condition/voltage 5.2 Surface Accumulation 5.3 Surface Depletion 5.4 Threshold condition/voltage | ![]() |
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MOS Capacitor | 5.5 Strong Inversion beyond threshold 5.5.1 Choice of Vt and Gate doping Type 5.6 MOS C-V Chraacteristics | ![]() |
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MOS Capacitor | 5.8 Poly-Si gate depletion-effective increase in tox 5.9 Inversion and Accumulation Charge-Layer 쏴 5.7 Oxide Charge | ![]() |
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MOS Transistor | 6.1 introduction to the MOSFET 6.2 Complementary MOS(CMOS) Technology 6.3 Surface Mobilities | ![]() |
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MOS Transistor | 6.4 MOSFET Vt, Body effect, and steep retrograding doping 6.5 Q_INV in MOSFET 6.6 Basic MOSFET I-V model | ![]() |
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MOS Transistor | 6.6 Basic MOSFET I-V model 6.8 Velocity Saturation 6.9 MOSFET I-V Model with Velocity Saturation | ![]() |
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MOS Transistor | 6.9 MOSFET I-V Model with Velocity Saturation 6.10 Parasitic source-Drain Resistances | ![]() |
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MOS Transistor | 6.11 Extraction on Rsd and Leff 6.13 Output Conductance 6.14 High-Frequency performance | ![]() |
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MOSFETs in Ics-Scaling, Leakage, and Other Topics | 7.1 Technology Scaling 7.2 Subthreshold Current | ![]() |