1. |
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Energy band theory in solids |
electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity
semiconductors |
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Energy band theory in solids |
electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity
semiconductors |
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Energy band theory in solids |
electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity
semiconductors |
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Energy band theory in solids |
electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity
semiconductors |
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2. |
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Electrical properties of semiocnductors |
deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation |
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Electrical properties of semiocnductors |
deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation |
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Electrical properties of semiocnductors |
deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation |
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Electrical properties of semiocnductors |
deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation |
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3. |
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Current-voltage characteristics of pn junctions |
built-in potential, diffusion theory,
forward- and backward-bias
conditions, depletion layer |
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Current-voltage characteristics of pn junctions |
built-in potential, diffusion theory,
forward- and backward-bias
conditions, depletion layer |
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Current-voltage characteristics of pn junctions |
built-in potential, diffusion theory,
forward- and backward-bias
conditions, depletion layer |
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4. |
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Capacitance- voltage and other characteristics of pn junctions |
capacitance in abrupt junction, Poison's
equation, breakdown mechanism, tunnel
diodes |
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Capacitance- voltage and other characteristics of pn junctions |
capacitance in abrupt junction, Poison's
equation, breakdown mechanism, tunnel
diodes |
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Capacitance- voltage and other characteristics of pn junctions |
capacitance in abrupt junction, Poison's
equation, breakdown mechanism, tunnel
diodes |
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Capacitance- voltage and other characteristics of pn junctions |
capacitance in abrupt junction, Poison's
equation, breakdown mechanism, tunnel
diodes |
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5. |
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Schottky diodes and fabrication of semiconductor devices |
metal-semiconductor junction,
thermionic emission, lithography,
impurity doping |
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Schottky diodes and fabrication of semiconductor devices |
metal-semiconductor junction,
thermionic emission, lithography,
impurity doping |
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Schottky diodes and fabrication of semiconductor devices |
metal-semiconductor junction,
thermionic emission, lithography,
impurity doping |
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Schottky diodes and fabrication of semiconductor devices |
metal-semiconductor junction,
thermionic emission, lithography,
impurity doping |
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6. |
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Operation principle of bipolar transistors Ⅰ |
emitter, base, collector, current
transmission efficiency |
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Operation principle of bipolar transistors Ⅰ |
emitter, base, collector, current
transmission efficiency |
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Operation principle of bipolar transistors Ⅰ |
emitter, base, collector, current
transmission efficiency |
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Operation principle of bipolar transistors Ⅰ |
emitter, base, collector, current
transmission efficiency |
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7. |
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Operation principle of bipolar transistors Ⅱ |
current amplification factor, switching
characteristics and bipolar integrated circuits |
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Operation principle of bipolar transistors Ⅱ |
current amplification factor, switching
characteristics and bipolar integrated circuits |
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Operation principle of bipolar transistors Ⅱ |
current amplification factor, switching
characteristics and bipolar integrated circuits |
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Operation principle of bipolar transistors Ⅱ |
current amplification factor, switching
characteristics and bipolar integrated circuits |
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8. |
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Operation principle of bipolar transistors Ⅲ |
bipolar power devices, breakover characteristics, thyristor |
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Operation principle of bipolar transistors Ⅲ |
bipolar power devices, breakover characteristics, thyristor |
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9. |
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Characteristics of MOS diodes Ⅰ |
ideal MOS diodes, accumulation,
depletion |
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10. |
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Characteritics of MOS diodes Ⅱ |
inversion conditions, surface potential, threshold voltage,
pulse response of MOS capacitance,
deep depletion |
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Characteritics of MOS diodes Ⅱ |
inversion conditions, surface potential, threshold voltage,
pulse response of MOS capacitance,
deep depletion |
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Characteritics of MOS diodes Ⅱ |
inversion conditions, surface potential, threshold voltage,
pulse response of MOS capacitance,
deep depletion |
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Characteritics of MOS diodes Ⅱ |
inversion conditions, surface potential, threshold voltage,
pulse response of MOS capacitance,
deep depletion |
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11. |
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Characreristics of MOSFETs |
pinch-off, ID - VG and ID - VD
characteristics, subthreshold
characterisics |
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Characreristics of MOSFETs |
pinch-off, ID - VG and ID - VD
characteristics, subthreshold
characterisics |
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Characreristics of MOSFETs |
pinch-off, ID - VG and ID - VD
characteristics, subthreshold
characterisics |
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12. |
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CMOS basic circuits |
resistor-load inverter circuits, CMOS
inverter circuits, NAND and NOR circuits |
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CMOS basic circuits |
resistor-load inverter circuits, CMOS
inverter circuits, NAND and NOR circuits |
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