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pn Junction Diode: Transient Response | 1) Small signal admittance in pn Junction diode. 2) Forward-bias diffusion admittance. | ![]() |
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Optoelectronic Diodes (Ch 9-1) | 1) Photonics. 2) Radiative transition 3) Optical absorption 4) Photo detectors 5) Solar cells | ![]() |
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Optoelectronic Diodes (Ch 9-2) | 1) Photonics. 2) Radiative transition 3) Optical absorption 4) Photo detectors 5) Solar cells | ![]() |
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BJT Fundamentals (Ch10-1) | BJT fundamentals | ![]() |
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BJT Fundamentals (Ch10-2) | 1) Operational consideration 2) Performance parameters | ![]() |
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BJT Static characteristics (Ch11-1) | 1) Ideal transistor analysis 2) Simplified relationships 3) Performance parameters | ![]() |
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BJT Static characteristics (Ch11-2) | 1) Eblners-Moll equations and model 2) Derivation from the ideal 3) Punch-through | ![]() |
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BJT Static characteristics (Ch11-3) | 1) Eblners-Moll equations and model 2) Derivation from the ideal 3) Punch-through | ![]() |
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MS Contacts and Schottky Diodes (Ch14-1) | 1) Ideal MS contacts 2) Schottky diode | ![]() |
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MS Contacts and Schottky Diodes (Ch14-2) | 3) I-V characteristics 4) ac response | ![]() |
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Field Effect Introduction (Ch15-1) | 1) General information of the J-FET and MESFET 2) Biasing the JFET | ![]() |
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Field Effect Introduction (Ch15-2) | 3) ID-VD relationship 4) ID-VD characteristics | ![]() |
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MOS Fundamentals (Ch16-1) | 1) Electrostatics | ![]() |
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MOS Fundamentals (Ch16-2) | 2) Semiconductor electrostatics | ![]() |
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MOSFETs (Ch17-1) | 1) MOSFETs 2) Quantitative ID-VD relationships | ![]() |
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MOSFETs (Ch17-2) | 3) Bulk-charge throry | ![]() |