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Review1 | 반도체공학I에서 배운 내용 Review | ![]() |
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Review2 | 반도체공학I에서 배운 내용 Review | ![]() |
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Optoelectronic Devices | 1. PHOTODIODES 2. LIGHT-EMITTING DIODE | ![]() |
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Optoelectronic Devices | 1. LASERS 2. TUNNEL DIODE | ![]() |
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Bipolar Junction Transistors | 1. FUNDAMENTALS OF BJT OPERATION 2. AMPLIFICATION WITH BJTS | ![]() |
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Bipolar Junction Transistors | 1. BJT FABRICATION 2. MINORITY CARRIER DISTRIBUTIONS AND TERMINAL CURRENT | ![]() |
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Generalized Bias | The Coupled-Diode Model | ![]() |
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p-n-p-n diode | 1. THE p-n-p-n DIODE 2. THE SEMICONDUCTOR CONTROLLED RECTIFIER 3. TRANSISTOR OPERATION 4. THE JUNCTION FET | ![]() |
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THE METAL-INSULATOR-SEMICONDUCTOR FET | 1. The GaAs MESFET 2. The High Electron Mobility Transistor (HEMT) 3. Short Channel Effects 4. Basic Operation and Fabrication | ![]() |
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Ideal MOS Capacitor | Ideal MOS Capacitor | ![]() |
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Ideal MOS Capacitor | Ideal MOS Capacitor | ![]() |
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Ideal MOS Capacitor | 1. Definition of Small-Signal Capacitances 2. Capacitance-Voltage Characteristics of MOS Capacitor 3. Accumulation 4. Depletion 5. Low-Frequency C-V Characteristic: Inversion 6. High-Frequency C-V Characteristic: Inversion 7. Deep Depletion | ![]() |
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Effects of Real Surfaces | 1. Effects of Real Surfaces 2. Threshold Voltage | ![]() |
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MOS Capacitance-Voltage Analysis | 1. MOS Capacitance-Voltage Analysis 2. Time-dependent Capacitance Measurement 3. Current-Voltage Characteristics of MOS Gate Oxides | ![]() |
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THE MOS FIELD-EFFECT TRANSISTOR | 1. Output Characteristics 2. Transfer Characteristics 3. Mobility Models | ![]() |
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THE MOS FIELD-EFFECT TRANSISTOR | 1. Control of Threshold Voltage 2. Substrate Bias Effects (Body Effect) 3. Subthreshold Characteristics | ![]() |
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THE MOS FIELD-EFFECT TRANSISTOR | 1. Equivalent Circuit for the MOSFET 2. MOSFET Scaling and Hot Electron Effects 3. Drain-Induced Barrier Lowering | ![]() |
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Integrated Circuits | 1. BACKGROUND 2. EVOLUTION OF INTEGRATED CIRCUITS 3. MONOLITHIC DEVICE ELEMENTS | ![]() |
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ISRC 0.25 μm CMOS Process | ISRC 0.25 μm CMOS Process | ![]() |
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ISRC 0.25 μm CMOS Process | ISRC 0.25 μm CMOS Process | ![]() |
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Charge Transfer Devices | 1. Dynamic Effects in MOS Capacitors 2. The Basic CCD 3. Logic Devices | ![]() |
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Semiconductor Memories | 1. Organization of RAM 2. SRAM | ![]() |
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Semiconductor Memories | DRAM | ![]() |
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Semiconductor Memories | FLASH Memories | ![]() |
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Testing, Bonding, and Packaging | 1. Testing 2. Wire Bonding 3. Flip-chip Techniques 4. Packaging | ![]() |